Effects of Temperature on the Efficiency of Photovoltaic Modules

Abstract

This article presents calculations of the efficiency and power of modules of various technologies using mathematical expressions and equations. In the calculations, we used experimentally measured values of solar radiation, module temperature and passport values of some parameters obtained by module manufacturers under Standard Testing Conditions (STC). The results of analytical calculations and comparisons are presented in graphical and tabular forms. The object of the study, were the following types of photovoltaic modules: silicon monocrystalline (mc-Si), silicon polycrystalline (pc-Si), thin-film based on copper, indium, gallium and selenide (CIGS), thin-film based on cadmium telluride (CdTe). In this work is determined the influence of the temperature factor, external parameters on the energy performance and efficiency of photovoltaic modules. At the maximum module temperature of 85°C, the power losses from nominal power value of the modules, respectively, had the following percentages: pc-Si, mc-Si - 33%, CdTe – 20%, CIGS–29%. According to the calculations the decrease in the efficiency of modules under the influence of heating temperature was 2-2.4% in silicon modules, 0.6-0.7% in thin-film modules.