Dynamic manipulation of chiral domain wall spacing for advanced spintronic memory and logic devices

Abstract

Nanoscopic magnetic domain walls (DWs), via their absence or presence, enable highly interesting binary data bits. The current-controlled, high-speed, synchronous motion of sequences of chiral DWs in magnetic nanoconduits induced by current pulses makes possible high-performance spintronic memory and logic devices. The closer the spacing between neighboring DWs in an individual conduit or nanowire, the higher the data density of the device, but at the same time, the more difficult it is to read the bits. Here, we show how the DW spacing can be dynamically varied to facilitate reading for otherwise closely packed bits. In the first method, the current density is increased in portions of the conduit that, thereby, locally speeds up the DWs, decompressing them and making them easier to read. In the second method, a localized bias current is used to compress and decompress the DW spacing. Both of these methods are demonstrated experimentally and validated by micromagnetic simulations. DW compression and decompression rates as high as 88% are shown. These methods can increase the density with which DWs can be packed in future DW-based spintronic devices by more than an order of magnitude.