Study of Some Structural, Optical and Electrical Properties of Thin Film Selenium Sulfide Tin Prepared by the Thermal Evaporation Method in Vacuum

Abstract

This research includes the preparation of thin films of Se75S25-xSnx by vacuum thermal evaporation method with a thickness of 400 +-20 nm on glass substrates and studying some structural, optical and electrical properties of the film. X-ray examination detect that the film has a random structure at (x=0 and 5) while single crystal growth begins at x=10,15. By measuring the transmittance and absorbance spectra for the wavelength range 400 – 1100 nm it was found that the transmittance decreases and the absorbance increases as a function of wavelength with increasing tin content. The energy gap for the indirect transition allowed was also calculated and shown to decrease with increasing tin content. The Hall effect examination revealed that the film prepared at (x=0 and 5) is of the P type while at x=10, 15 it turns into the N type and that the conductivity increases with increasing tin content and the resistivity decreases.