Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/5049
Title: Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates
Author(s): Saengkaew, Phannee
Referee(s): Krost, Alois
Hoffmann, Axel
Granting Institution: Otto-von-Guericke-Universität Magdeburg
Issue Date: 2010
Extent: Online-Ressource (PDF-Datei: 227 S., 10,7 KB)
Type: Hochschulschrift
Type: Doctoral Thesis
Language: English
Publisher: Universitätsbibliothek
Otto von Guericke University Library, Magdeburg, Germany
URN: urn:nbn:de:101:1-201104192936
Subjects: Aluminiumnitrid
Galliumnitrid
Epitaxieschicht
Silicium
Kristallfläche
MOCVD-Verfahren
Lumineszenzdiode
Ultraviolett
Hochschulschrift
URI: https://opendata.uni-halle.de//handle/1981185920/11139
http://dx.doi.org/10.25673/5049
Open Access: Open access publication
Appears in Collections:Fakultät für Naturwissenschaften

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