Please use this identifier to cite or link to this item:
http://dx.doi.org/10.25673/4786Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kalkofen, Bodo | - |
| dc.date.accessioned | 2018-09-24T16:18:03Z | - |
| dc.date.available | 2018-09-24T16:18:03Z | - |
| dc.date.issued | 2007 | - |
| dc.identifier.uri | https://opendata.uni-halle.de//handle/1981185920/10828 | - |
| dc.identifier.uri | http://dx.doi.org/10.25673/4786 | - |
| dc.description.statementofresponsibility | Bodo Kalkofen | - |
| dc.format.extent | Online-Ressource (PDF-Datei: 176 S., 3289 KB) | - |
| dc.language.iso | ger | - |
| dc.publisher | Universitätsbibliothek | - |
| dc.publisher | Otto von Guericke University Library, Magdeburg, Germany | - |
| dc.subject | Hochschulschrift | - |
| dc.subject | Online-Publikation | - |
| dc.subject.ddc | 621 | - |
| dc.title | Untersuchungen zum Dotieren von Silicium aus einer Oberflächenbelegung mit Phosphor in einem Kurzzeitprozess | - |
| dc.title.alternative | Rapid thermal doping of silicon from a phosphorus surface layer | - |
| dcterms.type | Hochschulschrift | - |
| dc.type | PhDThesis | - |
| dc.identifier.urn | urn:nbn:de:101:1-201010181765 | - |
| local.publisher.universityOrInstitution | Otto-von-Guericke-Universität Magdeburg | - |
| local.subject.keywords | Silicon, shallow junction, rapid thermal doping, vapour phase doping, atomic-layer doping, phosphorus diffusion, phosphine adsorption, sheet resistance, four-point probe, native oxidation | - |
| local.openaccess | true | - |
| Appears in Collections: | Fakultät für Elektrotechnik und Informationstechnik | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| bodkalkofen.pdf | 3.39 MB | Adobe PDF |  View/Open |