Effect of Nickel Oxide on Morphological and Electrical Properties of Manganese Oxide Nanostructured Thin Films

Abstract

In this study, thin films of manganese oxide (Mn₃O₄) doped with nickel oxide (NiO) at different doping ratios (0, 1, 3, 5, and 7%) were prepared and deposited on glass slides at a temperature of 350°C using the chemical spray pyrolysis technique. Spectral analysis was performed, and a scanning electron microscope (SEM) was used. The SEM results show that the prepared films are spherical in shape, resembling cauliflower, and are irregular in size. This irregularity is due to the crystalline defects generated in the films. An Energy Dispersive Spectrometer (EDS) analysis was conducted to verify the components of the prepared thin films, which allowed for the determination of the weight and atomic ratios of the elements composing the films. Regarding the electrical measurements, conductivity, resistivity, the Hall coefficient, and charge carrier concentration were determined. We note that the prepared films exhibit p-type charge carriers and that the Hall effect increases with increasing doping ratios. The Hall coefficient values increase with doping ratios and reach their highest value at 3%, while the resistivity values peak at a doping ratio of 1%. The films show low conductivity overall, with the highest conductivity value observed at 7% doping. Similarly, the mobility increases with doping and attains its highest value at 7%.