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Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/4948
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dc.contributor.authorReiher, Fabian-
dc.date.accessioned2018-09-24T16:21:43Z-
dc.date.available2018-09-24T16:21:43Z-
dc.date.issued2009-
dc.identifier.urihttps://opendata.uni-halle.de//handle/1981185920/10990-
dc.identifier.urihttp://dx.doi.org/10.25673/4948-
dc.description.statementofresponsibilityvon Fabian Reiher-
dc.format.extentOnline-Ressource (PDF-Datei: 222 S., 81,2 MB)-
dc.language.isoger-
dc.publisherUniversitätsbibliothek-
dc.publisherOtto von Guericke University Library, Magdeburg, Germany-
dc.subjectSilicium-
dc.subjectKristallfläche-
dc.subjectGalliumnitrid-
dc.subjectDünne Schicht-
dc.subjectMOCVD-Verfahren-
dc.subjectElektronisches Bauelement-
dc.subjectHochschulschrift-
dc.subject.ddc537-
dc.titleWachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie-
dcterms.typeHochschulschrift-
dc.typeDoctoral Thesis-
dc.identifier.urnurn:nbn:de:101:1-201012103946-
local.publisher.universityOrInstitutionOtto-von-Guericke-Universität Magdeburg-
local.openaccesstrue-
Appears in Collections:Fakultät für Naturwissenschaften

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