Please use this identifier to cite or link to this item:
http://dx.doi.org/10.25673/5211Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Krtschil, André | - |
| dc.date.accessioned | 2018-09-24T16:23:24Z | - |
| dc.date.available | 2018-09-24T16:23:24Z | - |
| dc.date.issued | 2000 | - |
| dc.identifier.uri | https://opendata.uni-halle.de//handle/1981185920/11055 | - |
| dc.identifier.uri | http://dx.doi.org/10.25673/5211 | - |
| dc.description.statementofresponsibility | von André Krtschil | - |
| dc.format.extent | Online-Ressource (PDF-Datei: 140 S., 1189 KB) | - |
| dc.language.iso | ger | - |
| dc.publisher | Universitätsbibliothek | - |
| dc.publisher | Otto von Guericke University Library, Magdeburg, Germany | - |
| dc.subject | Hochschulschrift | - |
| dc.subject | Online-Publikation | - |
| dc.title | Elektrische Charakterisierung von GaN-basierten Halbleitersystemen | - |
| dc.title.alternative | Electrical characterization of GaN-based semiconductors | - |
| dcterms.type | Hochschulschrift | - |
| dc.type | PhDThesis | - |
| dc.identifier.urn | urn:nbn:de:101:1-201010122182 | - |
| local.publisher.universityOrInstitution | Otto-von-Guericke-Universität Magdeburg | - |
| local.subject.keywords | Galliumnitrid, elektrische und photoelektrische Eigenschaften, Heterostrukturen, Störstellen, Defekte, Dotierung, Ionenimplantation, Schottky-Raumladung | - |
| local.openaccess | true | - |
| Appears in Collections: | Fakultät für Naturwissenschaften | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| andkrtschil.pdf | 1.19 MB | Adobe PDF |  View/Open |