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Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/5049
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dc.contributor.refereeKrost, Alois-
dc.contributor.refereeHoffmann, Axel-
dc.contributor.authorSaengkaew, Phannee-
dc.date.accessioned2018-09-24T17:04:18Z-
dc.date.available2018-09-24T17:04:18Z-
dc.date.issued2010-
dc.identifier.urihttps://opendata.uni-halle.de//handle/1981185920/11139-
dc.identifier.urihttp://dx.doi.org/10.25673/5049-
dc.description.statementofresponsibilityvon Phannee Saengkaew-
dc.format.extentOnline-Ressource (PDF-Datei: 227 S., 10,7 KB)-
dc.language.isoeng-
dc.publisherUniversitätsbibliothek-
dc.publisherOtto von Guericke University Library, Magdeburg, Germany-
dc.subjectAluminiumnitrid-
dc.subjectGalliumnitrid-
dc.subjectEpitaxieschicht-
dc.subjectSilicium-
dc.subjectKristallfläche-
dc.subjectMOCVD-Verfahren-
dc.subjectLumineszenzdiode-
dc.subjectUltraviolett-
dc.subjectHochschulschrift-
dc.subject.ddc537-
dc.titleEpitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates-
dcterms.typeHochschulschrift-
dc.typePhDThesis-
dc.identifier.urnurn:nbn:de:101:1-201104192936-
local.publisher.universityOrInstitutionOtto-von-Guericke-Universität Magdeburg-
local.openaccesstrue-
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