Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/111033
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dc.contributor.authorBeirau, Tobias-
dc.contributor.authorKilian, Rüdiger-
dc.contributor.authorStipp, Michael-
dc.contributor.authorEwing, Rodney C.-
dc.date.accessioned2023-10-18T10:00:33Z-
dc.date.available2023-10-18T10:00:33Z-
dc.date.issued2023-
dc.identifier.urihttps://opendata.uni-halle.de//handle/1981185920/112987-
dc.identifier.urihttp://dx.doi.org/10.25673/111033-
dc.description.abstractElectron backscatter diffraction (EBSD) was employed to probe the structural order of a zoned radiation-damaged zircon (ZrSiO4) on the sub-micron scale. The amorphous fraction of the growth-zones is in the range of ∼45–80%, due to variations in the amount of incorporated uranium and thorium (∼0.22–0.43 wt% UO2 and ∼0.02–0.08 wt% ThO2) and the resulting alpha-decay events over time. The obtained Kikuchi patterns’ band contrast (bc) and band slope (bs) are indicative of the degree of atomic-scale order. The excellent correlation of both parameters with the evolution of the elastic modulus validates the methods reliability.eng
dc.language.isoeng-
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/-
dc.subject.ddc550-
dc.titleProbing structural disorder in zircon by electron backscatter diffraction (EBSD) : radiation damage and Kikuchi patterneng
dc.typeArticle-
local.versionTypepublishedVersion-
local.bibliographicCitation.journaltitleJournal of nuclear materials-
local.bibliographicCitation.volume581-
local.bibliographicCitation.publishernameElsevier Science-
local.bibliographicCitation.publisherplaceAmsterdam [u.a.]-
local.bibliographicCitation.doi10.1016/j.jnucmat.2023.154440-
local.openaccesstrue-
dc.identifier.ppn1865874418-
cbs.publication.displayform2023-
local.bibliographicCitation.year2023-
cbs.sru.importDate2023-10-18T09:59:44Z-
local.bibliographicCitationEnthalten in Journal of nuclear materials - Amsterdam [u.a.] : Elsevier Science, 1959-
local.accessrights.dnbfree-
Appears in Collections:Open Access Publikationen der MLU

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