Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/3834
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dc.contributor.refereeKrost, Alois
dc.contributor.authorHums, Christoph
dc.date.accessioned2018-09-24T17:54:16Z-
dc.date.available2018-09-24T17:54:16Z-
dc.date.issued2012
dc.identifier.urihttps://opendata.uni-halle.de//handle/1981185920/11588-
dc.identifier.urihttp://dx.doi.org/10.25673/3834-
dc.description.statementofresponsibilityvon Christoph Hums
dc.format.extentOnline-Ressource (PDF-Datei: 179 S., 34,6 MB)
dc.language.isoger
dc.publisherUniversitätsbibl.
dc.publisherOtto von Guericke University Library, Magdeburg, Germany
dc.subjectAluminiumnitrid
dc.subjectIndiumnitrid
dc.subjectGalliumnitrid
dc.subjectHeterostruktur
dc.subjectMOCVD-Verfahren
dc.subjectHochschulschrift
dc.subject.ddc530-
dc.titleMOVPE Wachstum und Eigenschaften von AlIn(Ga)N Schichten und Schichtsystemen
dcterms.typeHochschulschrift
dc.typeDoctoral Thesis
dc.identifier.urnurn:nbn:de:gbv:ma9:1-2523
local.publisher.universityOrInstitutionOtto-von-Guericke-Universität Magdeburg
local.openaccesstrue-
Appears in Collections:Fakultät für Naturwissenschaften

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