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Title: Photoluminescence line shape analysis of highly n‐type doped zincblende GaN
Author(s): Baron, Elias
Goldhahn, Rüdiger
Deppe, Michael
As, Donat J.
Feneberg, Martin
Issue Date: 2019
Type: Article
Language: English
URN: urn:nbn:de:gbv:ma9:1-1981185920-419603
Subjects: Photoluminescence
Burstein–Moss shift
Zincblende GaN
Abstract: An investigation of different n-type doped zincblende gallium nitride thin films measured by photoluminescence from 7 K to room temperature is presented. The spectra change with increasing free-carrier concentration due to many-body effects such as the Burstein–Moss shift and band-gap renormalization. The samples are grown by molecular beam epitaxy on a 3C-SiC/Si (001) substrate, and a free-carrier concentration above 1020 cm 3 is achieved by introducing germanium as a donor. The analysis of the measured spectra by a line-shape fit yields different transition processes for different doping concentrations and temperatures, such as a band–band transition and a band–acceptor transition. The conduction band dispersion of Kane’s model is perfectly suited to explain the experimental data quantitatively.
Open Access: Open access publication
License: (CC BY 4.0) Creative Commons Attribution 4.0(CC BY 4.0) Creative Commons Attribution 4.0
Sponsor/Funder: Projekt DEAL 2019
Journal Title: Physica status solidi / B
Publisher: Wiley-VCH
Publisher Place: Weinheim
Issue: 2019
Original Publication: 10.1002/pssb.201900522
Page Start: 1
Page End: 5
Appears in Collections:Fakultät für Naturwissenschaften (OA)

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