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Title: Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Author(s): Feneberg, Martin
Romero, Fátima
Goldhahn, Rüdiger
Wernicke, Tim
Reich, Christoph
Stellmach, Joachim
Mehnke, Frank
Knauer, Arne
Weyers, Markus
Kneissl, Michael
Issue Date: 2021
Type: Article
Language: English
URN: urn:nbn:de:gbv:ma9:1-1981185920-912411
Subjects: Ultraviolet spectral range
Light emitting diode structures
Defect luminescence bands
Abstract: Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
Open Access: Open access publication
License: (CC BY 4.0) Creative Commons Attribution 4.0(CC BY 4.0) Creative Commons Attribution 4.0
Sponsor/Funder: Transformationsvertrag
Journal Title: Applied physics letters
Publisher: American Inst. of Physics
Publisher Place: Melville, NY
Volume: 118
Issue: 20
Original Publication: 10.1063/5.0047021
Page Start: 1
Page End: 6
Appears in Collections:Fakultät für Naturwissenschaften (OA)

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