Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/118304
Title: Effect of Ga variation on the bulk and grain-boundary properties of Cu(In,Ga)Se₂ absorbers in thin-film solar cells and their impacts on open-circuit voltage losses
Author(s): Thomas, SinjuLook up in the Integrated Authority File of the German National Library
Witte, Wolfram
Hariskos, DimitriosLook up in the Integrated Authority File of the German National Library
Paetel, Stefan
Song, Chang-Yun
Kempa, HeikoLook up in the Integrated Authority File of the German National Library
Maiberg, Matthias
El-Ganainy, Nora
Abou-Ras, DanielLook up in the Integrated Authority File of the German National Library
Issue Date: 2025
Type: Article
Language: English
Abstract: Polycrystalline widegap Cu(In,Ga)Se2 (CIGSe) absorbers for top cells in photovoltaic tandem devices can be synthesized via [Ga]/([Ga] + [In]) (GGI) ratios of > 0.5. However, the power conversion efficiencies of such high-GGI devices are smaller than those of the record cells with GGI < 0.5. In the present work, the effects of the GGI ratio on various CIGSe material properties were studied and correlated with the radiative and nonradiative open-circuit voltage (VOC) deficits of the thin-film solar cells. Average grain sizes, grain boundary (GB) recombination velocities, fluctuations in luminescence energy distribution, barrier heights at GBs, effective electron lifetimes, and Urbach energies were investigated in five solar cells with GGI ratios from 0.13 to 0.83. It was found that the GGI variation affects GB recombination velocities, fluctuations in spatial luminescence distributions, the average grain size, the electron lifetime, and the Urbach energy. In contrast, the detected ranges of barrier heights at GBs are independent of the GGI ratio. Mainly Ga/In gradients give rise to substantial radiative VOC losses in all solar cells. Nonradiative VOC deficits are dominant especially for solar cells with GGI > 0.5, which can be attributed to low bulk lifetimes and enhanced recombination at GBs in CIGSe absorbers in this compositional range.
URI: https://opendata.uni-halle.de//handle/1981185920/120263
http://dx.doi.org/10.25673/118304
Open Access: Open access publication
License: (CC BY 4.0) Creative Commons Attribution 4.0(CC BY 4.0) Creative Commons Attribution 4.0
Journal Title: Progress in photovoltaics
Publisher: Wiley
Publisher Place: Chichester
Volume: 33
Issue: 2
Original Publication: 10.1002/pip.3843
Page Start: 265
Page End: 275
Appears in Collections:Open Access Publikationen der MLU

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