Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/4052
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dc.contributor.refereeDadgar, Armin
dc.contributor.authorRavash, Roghaiyeh
dc.date.accessioned2018-09-24T17:57:19Z-
dc.date.available2018-09-24T17:57:19Z-
dc.date.issued2014
dc.identifier.urihttps://opendata.uni-halle.de//handle/1981185920/11784-
dc.identifier.urihttp://dx.doi.org/10.25673/4052-
dc.description.statementofresponsibilityvon Roghaiyeh Ravash
dc.format.extentOnline Ressource (PDF-Datei)
dc.language.isoeng
dc.publisherUniversitätsbibl.
dc.publisherOtto von Guericke University Library, Magdeburg, Germany
dc.subject.ddc530-
dc.titleGrowth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy
dcterms.typeHochschulschrift
dc.typePhDThesis-
dc.identifier.urnurn:nbn:de:gbv:ma9:1-4514
local.publisher.universityOrInstitutionOtto-von-Guericke-Universität Magdeburg
local.openaccesstrue-
Appears in Collections:Fakultät für Naturwissenschaften

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