Please use this identifier to cite or link to this item:
http://dx.doi.org/10.25673/4052| Title: | Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy |
| Author(s): | Ravash, Roghaiyeh |
| Referee(s): | Dadgar, Armin |
| Granting Institution: | Otto-von-Guericke-Universität Magdeburg |
| Issue Date: | 2014 |
| Extent: | Online Ressource (PDF-Datei) |
| Type: | Hochschulschrift |
| Type: | PhDThesis |
| Language: | English |
| Publisher: | Universitätsbibl. Otto von Guericke University Library, Magdeburg, Germany |
| URN: | urn:nbn:de:gbv:ma9:1-4514 |
| URI: | https://opendata.uni-halle.de//handle/1981185920/11784 http://dx.doi.org/10.25673/4052 |
| Open Access: |  Open access publication |
| Appears in Collections: | Fakultät für Naturwissenschaften |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Roghaiyeh_Ravash_Dissertation.pdf | 8.3 MB | Adobe PDF |  View/Open |