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Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/5049
Title: Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates
Author(s): Krost, Alois
Hoffmann, Axel
Saengkaew, Phannee
Keywords: Aluminiumnitrid
Galliumnitrid
Epitaxieschicht
Silicium
Kristallfläche
MOCVD-Verfahren
Lumineszenzdiode
Ultraviolett
Hochschulschrift
Issue Date: 2010
Publisher: Universitätsbibliothek
Otto von Guericke University Library, Magdeburg, Germany
URI: https://opendata.uni-halle.de//handle/1981185920/11139
http://dx.doi.org/10.25673/5049
Appears in Collections:Fakultät für Naturwissenschaften

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