Please use this identifier to cite or link to this item:
http://dx.doi.org/10.25673/5049| Title: | Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates |
| Author(s): | Saengkaew, Phannee |
| Referee(s): | Krost, Alois Hoffmann, Axel |
| Granting Institution: | Otto-von-Guericke-Universität Magdeburg |
| Issue Date: | 2010 |
| Extent: | Online-Ressource (PDF-Datei: 227 S., 10,7 KB) |
| Type: | Hochschulschrift |
| Type: | PhDThesis |
| Language: | English |
| Publisher: | Universitätsbibliothek Otto von Guericke University Library, Magdeburg, Germany |
| URN: | urn:nbn:de:101:1-201104192936 |
| Subjects: | Aluminiumnitrid Galliumnitrid Epitaxieschicht Silicium Kristallfläche MOCVD-Verfahren Lumineszenzdiode Ultraviolett Hochschulschrift |
| URI: | https://opendata.uni-halle.de//handle/1981185920/11139 http://dx.doi.org/10.25673/5049 |
| Open Access: |  Open access publication |
| Appears in Collections: | Fakultät für Naturwissenschaften |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| AlGaN_UV_LEDs_on_Si_20l10.pdf | 10.75 MB | Adobe PDF |  View/Open |