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Please use this identifier to cite or link to this item: http://dx.doi.org/10.25673/4052
Title: Growth of semi-polar GaN on high index silicon (11h) substrates by metal organic vapor phase epitaxy
Author(s): Ravash, Roghaiyeh
Advisor(s): Dadgar, Armin
Granting Institution: Otto-von-Guericke-Universität Magdeburg
Issue Date: 2014
Extent: Online Ressource (PDF-Datei)
Type: Hochschulschrift
Language: English
Publisher: Universitätsbibl.
Otto von Guericke University Library, Magdeburg, Germany
URN: urn:nbn:de:gbv:ma9:1-4514
URI: https://opendata.uni-halle.de//handle/1981185920/11784
http://dx.doi.org/10.25673/4052
Open access: Open access publication
Appears in Collections:Fakultät für Naturwissenschaften

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